With the new TSC3PAK, ROHM is closing precisely this gap. The new package for SiC MOSFETs combines efficient top-side cooling with the benefits of automated SMT manufacturing, whilst achieving heat dissipation on a par with conventional TO-247 packages. This enables the realisation of more compact, more efficient and easier-to-manufacture high-power applications.
| Key Facts | |
| Cooling concept | Top-side cooling |
| Manufacturing | SMT-compatible |
| High-voltage capability | AC peak voltages up to 1200 V |
| Creepage distance | 6.66 mm |
| Compatibility | ROHM’s 4th-generation SIC MOSFETs |
| Special Feature | Heat dissipation on a par with a TO-247 package |
Advantages
- Combines high heat dissipation with automated SMT manufacturing
- High power density in a compact design
- Simplified production processes
- Optimised thermal management
- Suitable for high-voltage applications
Applications
- On-board chargers (OBC) in electric vehicles
- Electric compressors
- PV inverters
- Server power supplies
- Industrial power supplies
Series production has already begun, and the TSC3PAK will initially be available for selected 4th-generation SiC MOSFETs. In addition, ROHM provides simulation models to speed up the development and evaluation of new circuit designs.
EcoMOS™ Brand
EcoMOS™ is ROHM's brand of silicon power MOSFETs designed for energy-efficient applications in the power device sector. Widely utilized in applications such as home appliances, industrial equipment, and automotive systems, EcoMOS™ provides a diverse lineup that enables product selection based on key parameters such as noise performance and switching characteristics to meet specific requirements.
