Diotec Semiconductor introduces its latest Silicon Carbide MOSFET DIF065SIC020, which features an exceptionally low R_DS(on) values of 20mΩ. It is encapsulated in the new TO-247-4L, consisting a fourth lead, also known as Kelvin Source. It enables faster switching speeds, lower power losses and higher reliability. This makes the ideally suited for a comprehensive portfolio of various applications: Data server power supplies, photovoltaic inverters, industrial motor drives and power conversion systems.

In the context of power electronics, where industries seek to improve energy efficiency, SiC is emerging as a promising next-generation technology. It promises superior capabilities that outperform conventional silicon-based Power MOSFETs or IGBTs, due to higher voltage breakdown and significantly reduced power dissipation. The implementation of wide bandgap technology facilitates these devices to operate reliably in extreme temperature applications. With comparatively lower on-state resistance, SiC MOSFETs generate lower switching losses per cycle and significantly improve efficiency while maintaining higher switching speed in a power conversion system. As a result, SiC MOSFETs are emerging as the primary solution for various applications, especially those requiring high voltage switching at very high frequencies – where Si-based MOSFETs and IGBTs are clearly limited.

Applications

Power supplies for Data Server
Charging systems for electric vehicles (EV)
Solar inverters
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
Switched-mode power supply (SMPS)
DC/DC converters
Industrial drives and supplies

Specifications

650V drain-source voltage (V_DSS)
Maximum 20mΩ on-state resistance (R_DS(on))
100µA drain-source leakage current (I_DSS)
From -10V to 22V continuous gate-source voltage (V_GSS)
Recommended turn-on Gate voltage V_GS(on) of 18V
Recommended turn-off Gate voltage V_GS(off)of -5V
550W power dissipation (P_tot)
Up to 150A peak drain current (I_DM)
0.38K/W maximum thermal resistance (R_thC)
-55°C to +175°C operating junction temperature range (T_j)
Industrial standard case outline TO-247 with 4 leads and Kelvin Source

Features

High reverse breakdown voltage
Advanced Planar technology
Extremely low on-state resistance
Fast switching time with low capacitance
Low Gate charge
Low total switching energy

With the DIF065SIC020, Diotec reinforces its commitment to powering the next generation of energy solutions with durable, high-efficiency SiC technology. Whether you're designing for data server, solar, industrial, or EV applications, this MOSFET is engineered to meet the demands of modern power systems.